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is a promising technology alternative to the next generation devices than conventional
planar MOSFET which has reached its scaling limits and is too leaky for too
little performance gain. FinFET is being recommended as the basis for future semiconductor
fabrication because of its power/performance benefits, scalability, superior
controls over short channel effects etc. Almost all the major Integrated device
manufacturers in the semiconductor eco-system are focusing and putting lot of
efforts on this promising and disruptive technology. It provides a new pathway
for Moore’s Law beyond 20nm as they have much better performance and reduced
power consumption compared to planar transistors. 

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